Technical parameters/frequency: 100 MHz
Technical parameters/number of pins: 3
Technical parameters/dissipated power: 500 mW
Technical parameters/breakdown voltage (collector emitter): 120 V
Technical parameters/minimum current amplification factor (hFE): 300 @1mA, 6V
Technical parameters/rated power (Max): 500 mW
Technical parameters/DC current gain (hFE): 430
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 500 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/length: 4.58 mm
External dimensions/width: 3.86 mm
External dimensions/height: 4.58 mm
External dimensions/packaging: TO-226-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bag
Other/Manufacturing Applications: Industrial, audio, power management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual |
|---|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review