Technical parameters/breakdown voltage (collector emitter): 55 V
Technical parameters/minimum current amplification factor (hFE): 120 @500mA, 5V
Technical parameters/rated power (Max): 25 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 25000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Fairchild | 功能相似 | TO-220 |
Power Bipolar Transistor, 3A I(C), 55V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
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Freescale | 功能相似 |
低频功率放大器 Low Frequency Power Amplifier
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ON Semiconductor | 功能相似 | TO-220 |
低频功率放大器 Low Frequency Power Amplifier
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KSA614YTSTU
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Fairchild | 功能相似 | TO-220-3 |
低频功率放大器 Low Frequency Power Amplifier
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