Technical parameters/rated voltage (DC): 6.3 V
Technical parameters/capacitors: 10 µF
Technical parameters/tolerances: ±10 %
Technical parameters/dielectric properties: X6S
Technical parameters/product series: GRM
Technical parameters/operating temperature (Max): 105 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/rated voltage: 6.3 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation (metric): 2012
Encapsulation parameters/Encapsulation: 0805
External dimensions/length: 2 mm
External dimensions/width: 1.25 mm
External dimensions/height: 1.25 mm
Dimensions/Packaging (Metric): 2012
External dimensions/packaging: 0805
External dimensions/thickness: 1.25 mm
Physical parameters/materials: X6S/-55℃~+105℃
Physical parameters/operating temperature: -55℃ ~ 105℃
Physical parameters/temperature coefficient: ±22 %
Other/Product Lifecycle: Active
Other/Packaging Methods: Cut Tape (CT)
Other/Minimum Packaging: 3000
Other/Manufacturing Applications: Consumer Electronics, Industrial, General, Consumer Electronics, Industrial, Portable Equipment, Power Management, Power Management, Portable Devices
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
GRM21BC80J106KE19L
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muRata | 功能相似 | 0805 |
MURATA GRM21BC80J106KE19L 多层陶瓷电容器, 表面贴装, GRM系列, 10 µF, ± 10%, X6T, 6.3 V, 0805 [2012 公制]
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GRM21BC81A106KE18L
|
muRata | 功能相似 | 0805 |
Murata GRM 0805 X6S 电介质 Murata GRM 系列高介电常数类型体积小，电容值大，具有多层结构 高可靠性且无极性 外部电极的锡镀层可实现出色的可焊接性 去耦和平滑电路及用于额定电压高于 200V 减震器电路中的应用 ### 0805 系列 镍挡板终端覆镀锡 (NiSn) 层，应用包括移动电话、视频和调谐器设计，COG/NPO 是温度补偿的最常见配方，为 EIA I 类陶瓷材料，X7R、X5R 配方称为温度稳定陶瓷，属于 EIA II 类材料，Y5V、Z5U 配方适合有限温度范围内的一般用途，属于 EIA II 类材料；这些特征非常适合退耦应用。Y5V、Z5U 配方适合有限温度范围内的一般用途，属于 EIA II 类材料；这些特征非常适合退耦应用。
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