Technical parameters/forward voltage: 1 V
Technical parameters/Maximum forward surge current (Ifsm): 250 A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -50 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: KBU-4
External dimensions/packaging: KBU-4
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
GBU6A-BP
|
Micro Commercial Components | 功能相似 | SIP-4 |
GBU 50V 6A
|
||
GBU6A-E3/45
|
Vishay Semiconductor | 类似代替 | SIP-4 |
桥式整流器 50 Volt 6.0 Amp Glass Passivated
|
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GBU6A-E3/45
|
VISHAY | 类似代替 | GBU-4 |
桥式整流器 50 Volt 6.0 Amp Glass Passivated
|
||
|
|
EIC | 类似代替 |
GENESIC SEMICONDUCTOR KBU6A Bridge Rectifier Diode, Single, 50V, 6A, SIP, 1V, 4Pins
|
|||
|
|
Gulfsemi | 类似代替 |
GENESIC SEMICONDUCTOR KBU6A Bridge Rectifier Diode, Single, 50V, 6A, SIP, 1V, 4Pins
|
|||
KBU6A
|
DC Components | 类似代替 |
GENESIC SEMICONDUCTOR KBU6A Bridge Rectifier Diode, Single, 50V, 6A, SIP, 1V, 4Pins
|
|||
KBU6A
|
GeneSiC Semiconductor | 类似代替 | SIP-4 |
GENESIC SEMICONDUCTOR KBU6A Bridge Rectifier Diode, Single, 50V, 6A, SIP, 1V, 4Pins
|
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