Technical parameters/rated voltage (DC): 20.0 V
Technical parameters/rated current: 4.20 A
Technical parameters/drain source resistance: 45.0 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 770mW (Ta)
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/leakage source breakdown voltage: 20.0 V
Technical parameters/breakdown voltage of gate source: ±10.0 V
Technical parameters/Continuous drain current (Ids): 4.20 A
Technical parameters/rise time: 35.0 ns
Technical parameters/Input capacitance (Ciss): 1200pF @10V(Vds)
Technical parameters/rated power (Max): 770 mW
Technical parameters/dissipated power (Max): 770mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NDS8425
|
ON Semiconductor | 功能相似 | SOIC-8 |
PowerTrench® N 通道 MOSFET，高达 9.9A，Fairchild Semiconductor ### MOSFET 晶体管，Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合，包括高电压 (>250V) 低电压 (Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性，以减少结电容和反向恢复电荷，无需额外外部元件即可保持系统启动和运行更长时间。
|
||
NDS8425
|
Fairchild | 功能相似 | SOIC-8 |
PowerTrench® N 通道 MOSFET，高达 9.9A，Fairchild Semiconductor ### MOSFET 晶体管，Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合，包括高电压 (>250V) 低电压 (Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性，以减少结电容和反向恢复电荷，无需额外外部元件即可保持系统启动和运行更长时间。
|
||
NTMS4N01R2
|
ON Semiconductor | 类似代替 | SOIC-8 |
功率MOSFET 4.2安培， 20伏特N沟道增强模式单一SO- 8封装 Power MOSFET 4.2 Amps, 20 Volts N−Channel Enhancement−Mode Single SO−8 Package
|
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