Technical parameters/forward voltage: 1.1V @17.5A
Technical parameters/forward current: 35 A
Technical parameters/Maximum forward surge current (Ifsm): 400 A
Technical parameters/forward voltage (Max): 1.1 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Chassis
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: KBPC-T
External dimensions/length: 28.8 mm
External dimensions/width: 28.8 mm
External dimensions/height: 25.4 mm
External dimensions/packaging: KBPC-T
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
GBPC3508-G
|
Comchip Technology | 类似代替 | Square-4 |
Diode Rectifier Bridge Single 800V 35A 4Pin Case GBPC Box
|
||
GBPC3508W-G
|
Comchip Technology | 功能相似 | GBPC-W-4 |
Bridge Rectifiers GBPCW GPP 35A 800V Rect. Bridge Diode
|
||
KBPC3508W
|
DC Components | 完全替代 |
桥式整流器 800 V - 35 A
|
|||
KBPC3508W
|
Diotec Semiconductor | 完全替代 |
桥式整流器 800 V - 35 A
|
|||
|
KBPC3508W
|
Comchip Technology | 完全替代 |
桥式整流器 800 V - 35 A
|
|||
|
KBPC3508W
|
EIC | 完全替代 | BR-50W |
桥式整流器 800 V - 35 A
|
||
KBPC3508W
|
GeneSiC Semiconductor | 完全替代 | KBPC-W |
桥式整流器 800 V - 35 A
|
||
|
KBPC3508W
|
LiteOn | 完全替代 |
桥式整流器 800 V - 35 A
|
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