Technical parameters/dissipated power: 4W (Ta), 75W (Tc)
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/dissipated power (Max): 4W (Ta), 75W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-204
External dimensions/packaging: TO-204
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Infineon | 功能相似 |
Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA,
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|||
2N6762
|
IXYS Semiconductor | 功能相似 |
Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA,
|
|||
2N6762
|
International Rectifier | 功能相似 |
Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA,
|
|||
|
|
Semelab | 功能相似 |
N-CHANNEL POWER MOSFET
|
|||
IRF430
|
SEME-LAB | 功能相似 |
N-CHANNEL POWER MOSFET
|
|||
IRF430
|
Fairchild | 功能相似 |
N-CHANNEL POWER MOSFET
|
|||
|
|
Unitrode | 功能相似 |
Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA,
|
|||
JANTX2N6762
|
Infineon | 功能相似 | TO-204 |
Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA,
|
||
JANTX2N6762
|
International Rectifier | 功能相似 | TO-3 |
Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA,
|
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