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Model JANTXV2N6760
Description The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high trans conductance; superior reverse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
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Brand: Infineon
Packaging TO-204
Delivery time
Packaging method
Standard packaging quantity 1
178.37  yuan 178.37yuan
1+:
$ 205.1255
10+:
$ 199.7744
50+:
$ 195.6719
100+:
$ 194.2449
200+:
$ 193.1747
500+:
$ 191.7478
1000+:
$ 190.8559
2000+:
$ 189.9641
Quantity
1+
10+
50+
100+
200+
Price
$205.1255
$199.7744
$195.6719
$194.2449
$193.1747
Price $ 205.1255 $ 199.7744 $ 195.6719 $ 194.2449 $ 193.1747
Start batch production 1+ 10+ 50+ 100+ 200+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9247) Minimum order quantity(1)
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Technical parameters/Input capacitance (Ciss): 620pF @25V(Vds)

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 75000 mW

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-204

External dimensions/packaging: TO-204

Other/Product Lifecycle: Active

Compliant with standards/RoHS standards: Non-Compliant

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
2N6760 2N6760 Harris 功能相似 TO-204AA
Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN
PDF
2N6760 2N6760 Infineon 功能相似 TO-204
Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN
PDF
2N6760 2N6760 International Rectifier 功能相似
Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN
PDF
2N6760 2N6760 Microsemi 功能相似 TO-204
Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN
PDF
IRF320 IRF320 Fairchild 功能相似
Trans MOSFET N-CH 400V 3.3A 3Pin(2+Tab) TO-3
PDF
IRF320 IRF320 Samsung 功能相似
Trans MOSFET N-CH 400V 3.3A 3Pin(2+Tab) TO-3
PDF
JANTX2N6760 JANTX2N6760 Microsemi 完全替代 TO-204
Trans MOSFET N-CH 400V 5.5A 3Pin(2+Tab) TO-3
PDF
NTE2386 NTE2386 NTE Electronics 功能相似 TO-3
TO-3 N-CH 600V 6.2A
PDF

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