Technical parameters/product series: IRF330
Encapsulation parameters/installation method: Through Hole
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Harris | 功能相似 | TO-204AA |
Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN
|
||
2N6760
|
Infineon | 功能相似 | TO-204 |
Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN
|
||
2N6760
|
International Rectifier | 功能相似 |
Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN
|
|||
2N6760
|
Microsemi | 功能相似 | TO-204 |
Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN
|
||
IRF320
|
Fairchild | 功能相似 |
Trans MOSFET N-CH 400V 3.3A 3Pin(2+Tab) TO-3
|
|||
IRF320
|
Samsung | 功能相似 |
Trans MOSFET N-CH 400V 3.3A 3Pin(2+Tab) TO-3
|
|||
JANTX2N6760
|
Microsemi | 完全替代 | TO-204 |
Trans MOSFET N-CH 400V 5.5A 3Pin(2+Tab) TO-3
|
||
NTE2386
|
NTE Electronics | 功能相似 | TO-3 |
TO-3 N-CH 600V 6.2A
|
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