Technical parameters/polarity: PNP
Technical parameters/dissipated power: 150 W
Technical parameters/breakdown voltage (collector emitter): 100 V
Technical parameters/maximum allowable collector current: 12A
Technical parameters/minimum current amplification factor (hFE): 1000 @6A, 3V
Technical parameters/rated power (Max): 150 W
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 150000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-3
External dimensions/packaging: TO-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards:
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6052G
|
ON Semiconductor | 功能相似 | TO-204-2 |
ON SEMICONDUCTOR 2N6052G 单晶体管 双极, PNP, -100 V, 150 W, -12 A, 100 hFE 新
|
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