Technical parameters/dissipated power: 1 W
Technical parameters/breakdown voltage (collector emitter): 140 V
Technical parameters/minimum current amplification factor (hFE): 100 @50mA, 10V
Technical parameters/rated power (Max): 1.5 W
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 1000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SMD-3
External dimensions/packaging: SMD-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Pack
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards:
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Semicoa Semiconductor | 功能相似 | 4 |
Small Signal Bipolar Transistor, 1A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC PACKAGE-3
|
||
JANTXV2N3635UB
|
Microsemi | 功能相似 | SMD-3 |
Small Signal Bipolar Transistor, 1A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC PACKAGE-3
|
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