Technical parameters/polarity: NPN
Technical parameters/dissipated power: 5 W
Technical parameters/minimum current amplification factor (hFE): 100
Technical parameters/Maximum current amplification factor (hFE): 300
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): 65 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-5-3
External dimensions/packaging: TO-5-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
Compliant with standards/military grade: Yes
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
ON Semiconductor | 功能相似 | 205AA |
NTE ELECTRONICS 2N3019 收发器芯片, NPN, 前置放大器驱动器
|
||
2N3019
|
Microsemi | 功能相似 | TO-5-3 |
NTE ELECTRONICS 2N3019 收发器芯片, NPN, 前置放大器驱动器
|
||
2N3019
|
Central Semiconductor | 功能相似 | TO-205 |
NTE ELECTRONICS 2N3019 收发器芯片, NPN, 前置放大器驱动器
|
||
2N3019
|
Semicoa | 功能相似 |
NTE ELECTRONICS 2N3019 收发器芯片, NPN, 前置放大器驱动器
|
|||
2N3019
|
Multicomp | 功能相似 | TO-39 |
NTE ELECTRONICS 2N3019 收发器芯片, NPN, 前置放大器驱动器
|
||
2N3019
|
CDIL | 功能相似 |
NTE ELECTRONICS 2N3019 收发器芯片, NPN, 前置放大器驱动器
|
|||
2N3019
|
Semicoa Semiconductor | 功能相似 | TO-5 |
NTE ELECTRONICS 2N3019 收发器芯片, NPN, 前置放大器驱动器
|
||
2N3019
|
Boca Semiconductor | 功能相似 |
NTE ELECTRONICS 2N3019 收发器芯片, NPN, 前置放大器驱动器
|
|||
2N3019
|
Infineon | 功能相似 | TO-39 |
NTE ELECTRONICS 2N3019 收发器芯片, NPN, 前置放大器驱动器
|
||
JANTX2N3019
|
ON Semiconductor | 功能相似 | TO-5-3 |
Small Signal Bipolar Transistor, 1-Element, NPN, Silicon, TO-39,
|
||
JANTX2N3019
|
Raytheon | 功能相似 |
Small Signal Bipolar Transistor, 1-Element, NPN, Silicon, TO-39,
|
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