Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/minimum current amplification factor (hFE): 40 @150mA, 10V
Technical parameters/rated power (Max): 500 mW
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-18
External dimensions/packaging: TO-18
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards:
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N2221AL
|
Microsemi | 类似代替 | TO-206 |
硅NPN开关晶体管 NPN SILICON SWITCHING TRANSISTOR
|
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