Technical parameters/Maximum reverse voltage (Vrrm): 152V
Technical parameters/peak pulse power: 500 W
Technical parameters/minimum reverse breakdown voltage: 190 V
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: B
External dimensions/packaging: B
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Manufacturing Applications: General
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
JANTX1N6137A
|
Microsemi | 完全替代 | B |
双向瞬态抑制器 BIDIRECTIONAL TRANSIENT SUPPRESSORS
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Prisemi | 功能相似 | DO-41 |
硅雪崩二极管 - 400W轴向引线型瞬态电压抑制器 Silicon Avalanche Diodes - 400W Axial Leaded Transient Voltage Supressors
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Panjit | 功能相似 | DO-41 |
硅雪崩二极管 - 400W轴向引线型瞬态电压抑制器 Silicon Avalanche Diodes - 400W Axial Leaded Transient Voltage Supressors
|
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