Technical parameters/clamp voltage: 64.6 V
Technical parameters/test current: 25 mA
Technical parameters/peak pulse power: 500 W
Technical parameters/minimum reverse breakdown voltage: 44.7 V
Technical parameters/breakdown voltage: 44.7 V
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/operating temperature: -55℃ ~ 175℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: B
External dimensions/packaging: B
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bag
Other/Manufacturing Applications: General
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Semtech Corporation | 完全替代 | Axial |
t Met Bi 500W 35.8V
|
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|
Semtech Corporation | 功能相似 | Axial |
Trans Voltage Suppressor Diode, 500W, 35.8V V(RWM), Bidirectional, 1 Element, Silicon,
|
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|
|
Semtech Corporation | 类似代替 | Axial |
Trans Voltage Suppressor Diode, 500W, 35.8V V(RWM), Bidirectional, 1 Element, Silicon,
|
||
JANTXV1N6122A
|
Microsemi | 类似代替 | B |
Trans Voltage Suppressor Diode, 500W, 35.8V V(RWM), Bidirectional, 1 Element, Silicon,
|
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