Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 15 V
Technical parameters/minimum current amplification factor (hFE): 40 @10mA, 1V
Technical parameters/rated power (Max): 360 mW
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-206
External dimensions/packaging: TO-206
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
CJ | 功能相似 | TO-92 |
NPN中频晶体管 NPN medium frequency transistor
|
||
BF370
|
Philips | 功能相似 |
NPN中频晶体管 NPN medium frequency transistor
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review