Technical parameters/dissipated power: 150000 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 150000 mW
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-254
External dimensions/packaging: TO-254
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Advanced Power Technology | 功能相似 |
N沟道MOSFET N-CHANNEL MOSFET
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2N7228
|
Microsemi | 功能相似 | TO-254-3 |
N沟道MOSFET N-CHANNEL MOSFET
|
||
IRFM450
|
Infineon | 完全替代 | TO-254 |
Trans MOSFET N-CH 500V 12A 3Pin(3+Tab) TO-254AA
|
||
IRFM450
|
International Rectifier | 完全替代 | TO-254 |
Trans MOSFET N-CH 500V 12A 3Pin(3+Tab) TO-254AA
|
||
JANTX2N7228
|
Infineon | 功能相似 | TO-254 |
每N沟道MOSFET合格MIL -PRF- 592分之19500 N-CHANNEL MOSFET Qualified per MIL-PRF-19500/592
|
||
JANTX2N7228
|
International Rectifier | 功能相似 | TO-254 |
每N沟道MOSFET合格MIL -PRF- 592分之19500 N-CHANNEL MOSFET Qualified per MIL-PRF-19500/592
|
||
|
|
Microchip | 完全替代 |
Trans MOSFET N-CH 500V 12A 3Pin(3+Tab) TO-254AA
|
|||
JANTX2N7228U
|
Microsemi | 完全替代 | SMD-267 |
Trans MOSFET N-CH 500V 12A 3Pin(3+Tab) TO-254AA
|
||
JANTX2N7228U
|
Infineon | 完全替代 | TO-254 |
Trans MOSFET N-CH 500V 12A 3Pin(3+Tab) TO-254AA
|
||
JANTXV2N7228U
|
Microsemi | 完全替代 | TO-267 |
Power Field-Effect Transistor, 12A I(D), 500V, 0.515ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN
|
||
JANTXV2N7228U
|
International Rectifier | 完全替代 |
Power Field-Effect Transistor, 12A I(D), 500V, 0.515ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN
|
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