Technical parameters/breakdown voltage (collector emitter): 120 V
Technical parameters/minimum current amplification factor (hFE): 40 @250mA, 2V
Technical parameters/rated power (Max): 1 W
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 1000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-39
External dimensions/packaging: TO-39
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bag
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards:
Customs Information/Hong Kong Import and Export License: NLR
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Microsemi | 完全替代 | TO-205 |
Trans GP BJT NPN 120V 1A 3Pin TO-39
|
||
|
|
Microsemi | 完全替代 | TO-39 |
双极晶体管 - 双极结型晶体管(BJT) Power BJT
|
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