Technical parameters/polarity: P-CH
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/Continuous drain current (Ids): 4A
Technical parameters/rise time: 100 ns
Technical parameters/Input capacitance (Ciss): 700pF @25V(Vds)
Technical parameters/descent time: 80 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 25000 mW
Package parameters/number of pins: 18
Encapsulation parameters/Encapsulation: LLCC
External dimensions/packaging: LLCC
Physical parameters/operating temperature: -55℃ ~ 125℃
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Infineon | 完全替代 | LLCC |
Power Field-Effect Transistor, 4A I(D), 200V, 1.68ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LCC-18
|
||
IRFE9230
|
Semelab | 完全替代 |
Power Field-Effect Transistor, 4A I(D), 200V, 1.68ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LCC-18
|
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