Technical parameters/number of channels: 1
Technical parameters/dissipated power: 800mW (Ta), 25W (Tc)
Technical parameters/drain source voltage (Vds): 400 V
Technical parameters/dissipated power (Max): 800mW (Ta), 25W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: LCC-18
External dimensions/packaging: LCC-18
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
TT Electronics Resistors | 功能相似 |
Power Field-Effect Transistor, 3A I(D), 400V, 1.15ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, LCC4-15
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|||
IRFE330
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International Rectifier | 功能相似 | Surface Mount |
Power Field-Effect Transistor, 3A I(D), 400V, 1.15ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, LCC4-15
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JANTXV2N6800U
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Infineon | 功能相似 | LLCC |
Trans MOSFET N-CH 400V 3A 18Pin CLLCC
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JANTXV2N6800U
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- | 功能相似 | - |
Trans MOSFET N-CH 400V 3A 18Pin CLLCC
|
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