Technical parameters/dissipated power: 0.6 W
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/minimum current amplification factor (hFE): 100 @150mA, 10V
Technical parameters/rated power (Max): 600 mW
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 600 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SMD-6
External dimensions/packaging: SMD-6
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N5794U
|
TT Electronics | 完全替代 |
NPN硅晶体管双 NPN SILICON DUAL TRANSISTOR
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Aeroflex | 完全替代 |
Trans GP BJT NPN 40V 0.6A 6Pin Case U
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JANTXV2N5794U
|
Microsemi | 完全替代 | U |
Trans GP BJT NPN 40V 0.6A 6Pin Case U
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