Technical parameters/dissipated power: 750 mW
Technical parameters/minimum current amplification factor (hFE): 15
Technical parameters/Maximum current amplification factor (hFE): 120
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/Encapsulation: TO-205-3
External dimensions/packaging: TO-205-3
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Contains lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
JANTX2N5416S
|
Microsemi | 完全替代 | TO-39 |
PNP小功率硅晶体管 PNP LOW POWER SILICON TRANSISTOR
|
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