Technical parameters/polarity: NPN
Technical parameters/dissipated power: 3 W
Technical parameters/breakdown voltage (collector emitter): 140 V
Technical parameters/maximum allowable collector current: 3A
Technical parameters/minimum current amplification factor (hFE): 25 @500mA, 4V
Technical parameters/rated power (Max): 3 W
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 3000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-66
External dimensions/packaging: TO-66
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Semelab | 功能相似 | TO-3 |
NTE ELECTRONICS 2N6059 Bipolar (BJT) Single Transistor, Darlington, NPN, 100V, 4MHz, 150W, 12A, 750 hFE
|
||
2N6059
|
Multicomp | 功能相似 | TO-3 |
NTE ELECTRONICS 2N6059 Bipolar (BJT) Single Transistor, Darlington, NPN, 100V, 4MHz, 150W, 12A, 750 hFE
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2N6059
|
Central Semiconductor | 功能相似 | TO-3 |
NTE ELECTRONICS 2N6059 Bipolar (BJT) Single Transistor, Darlington, NPN, 100V, 4MHz, 150W, 12A, 750 hFE
|
||
2N6059
|
Aeroflex | 功能相似 |
NTE ELECTRONICS 2N6059 Bipolar (BJT) Single Transistor, Darlington, NPN, 100V, 4MHz, 150W, 12A, 750 hFE
|
|||
2N6059
|
ON Semiconductor | 功能相似 | TO-204 |
NTE ELECTRONICS 2N6059 Bipolar (BJT) Single Transistor, Darlington, NPN, 100V, 4MHz, 150W, 12A, 750 hFE
|
||
2N6338G
|
ON Semiconductor | 功能相似 | TO-204-2 |
高功率NPN硅晶体管 High-Power NPN Silicon Transistors
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