Technical parameters/frequency: 250 MHz
Technical parameters/dissipated power: 0.5 W
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/minimum current amplification factor (hFE): 20 @1A, 1.5V
Technical parameters/rated power (Max): 500 mW
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 500 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-46-3
External dimensions/packaging: TO-46-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bag
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Motorola | 完全替代 |
Trans GP BJT NPN 40V 1.5A 3Pin TO-46
|
|||
JAN2N3737
|
Microsemi | 完全替代 | TO-46-3 |
Trans GP BJT NPN 40V 1.5A 3Pin TO-46
|
||
JANTX2N3737
|
Microsemi | 类似代替 | TO-46-3 |
Small Signal Bipolar Transistor, 1.5A I(C), 40V V(BR)CEO, 1Element, NPN, Silicon, TO-46, HERMETIC SEALED, METAL CAN-3
|
||
JANTXV2N3737
|
Microchip | 完全替代 |
Trans GP BJT NPN 40V 1.5A 3Pin TO-46
|
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