Technical parameters/polarity: NPN
Technical parameters/dissipated power: 20 W
Technical parameters/breakdown voltage (collector emitter): 300 V
Technical parameters/maximum allowable collector current: 1A
Technical parameters/minimum current amplification factor (hFE): 25 @250mA, 10V
Technical parameters/rated power (Max): 20 W
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 20000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-66
External dimensions/packaging: TO-66
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N3739
|
Microsemi | 完全替代 | TO-66 |
NPN Transistor
|
||
2N3739
|
Central Semiconductor | 完全替代 | TO-66 |
NPN Transistor
|
||
JAN2N3739
|
Microsemi | 完全替代 | TO-66 |
TO-66 NPN 300V 1A
|
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