Technical parameters/dissipated power: 0.36 W
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/minimum current amplification factor (hFE): 100 @10mA, 1V
Technical parameters/rated power (Max): 360 mW
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 360 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SMD-3
External dimensions/packaging: SMD-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards:
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