Technical parameters/Maximum reverse voltage (Vrrm): 98.8V
Technical parameters/peak pulse power: 1500 W
Technical parameters/minimum reverse breakdown voltage: 117.33 V
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: G-MELF
External dimensions/packaging: G-MELF
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tray
Other/Manufacturing Applications: General
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Microsemi | 完全替代 | SQ-MELF |
ESD 抑制器/TVS 二极管 MIL1 500 W BIPOLAR TVS, SQUARE:SQUARE
|
||
JAN1N6169US
|
Microchip | 完全替代 | C-Package-2 |
ESD 抑制器/TVS 二极管 MIL1 500 W BIPOLAR TVS, SQUARE:SQUARE
|
||
JANTXV1N6169US
|
Microsemi | 类似代替 | SQ-MELF |
Tvs Diode 98.8vwm 187.74vc Cpkg
|
||
JANTXV1N6169US
|
Semtech Corporation | 类似代替 | SMT |
Tvs Diode 98.8vwm 187.74vc Cpkg
|
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