Technical parameters/Maximum reverse voltage (Vrrm): 11.4V
Technical parameters/peak pulse power: 500 W
Technical parameters/minimum reverse breakdown voltage: 13.54 V
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SQ-MELF
External dimensions/packaging: SQ-MELF
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Manufacturing Applications: General
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1N6110US
|
Microsemi | 完全替代 | SQ-MELF |
ESD 抑制器/TVS 二极管 Bi-Directional TVS
|
||
1N6110US
|
Microchip | 完全替代 |
ESD 抑制器/TVS 二极管 Bi-Directional TVS
|
|||
1N6110US
|
Semtech Corporation | 完全替代 | SMT |
ESD 抑制器/TVS 二极管 Bi-Directional TVS
|
||
|
|
Microchip | 完全替代 | B,SQ-MELF |
TVS DIODE 11.4V 22.05V B SQ-MELF
|
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