Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 200 V
Technical parameters/maximum allowable collector current: 5A
Technical parameters/minimum current amplification factor (hFE): 40 @1A, 5V
Technical parameters/rated power (Max): 1.5 W
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 1500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SMD-0
External dimensions/packaging: SMD-0
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N5666U3
|
Microsemi | 完全替代 | SMD-0 |
NPN硅功率开关晶体管 NPN POWER SILICON SWITCHING TRANSISTOR
|
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