Technical parameters/breakdown voltage (collector emitter): 100 V
Technical parameters/minimum current amplification factor (hFE): 60 @2A, 2V
Technical parameters/rated power (Max): 1 W
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 1000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-205
External dimensions/packaging: TO-205
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Microsemi | 功能相似 | TO-5 |
Trans GP BJT PNP 80V 5A 3Pin TO-5
|
||
JAN2N6193
|
Semicoa Semiconductor | 完全替代 | TO-39 |
Trans GP BJT PNP 100V 5A 3Pin TO-39
|
||
JANTX2N6193
|
Microsemi | 完全替代 | TO-39-3 |
JANTX Series 100V 5A Through Hole PNP Medium Power Silicon Transistor - TO-39
|
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