Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/minimum current amplification factor (hFE): 70 @2.5A, 5V
Technical parameters/rated power (Max): 1 W
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-5
External dimensions/packaging: TO-5
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N3421
|
TT Electronics Resistors | 功能相似 |
Small Signal Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, HERMETIC SEALED, METAL, TO-39, 3 PIN
|
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2N3421
|
Sensitron Semiconductor | 功能相似 |
Small Signal Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, HERMETIC SEALED, METAL, TO-39, 3 PIN
|
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2N3421
|
Vishay Semiconductor | 功能相似 |
Small Signal Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, HERMETIC SEALED, METAL, TO-39, 3 PIN
|
|||
JANTX2N3421S
|
Microsemi | 功能相似 | TO-39 |
Trans GP BJT NPN 80V 3A 3Pin TO-39
|
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