Technical parameters/breakdown voltage (collector emitter): 275 V
Technical parameters/minimum current amplification factor (hFE): 8 @10A, 3V
Technical parameters/rated power (Max): 6 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: TO-3
External dimensions/packaging: TO-3
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Semelab | 类似代替 | TO-66 |
每NPN功率硅开关晶体管合格MIL -PRF- 455分之19500 NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/455
|
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2N5665
|
New Jersey Semiconductor | 类似代替 |
每NPN功率硅开关晶体管合格MIL -PRF- 455分之19500 NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/455
|
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2N5665
|
SavantIC Semiconductor | 类似代替 |
每NPN功率硅开关晶体管合格MIL -PRF- 455分之19500 NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/455
|
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2N5665
|
Microchip | 类似代替 |
每NPN功率硅开关晶体管合格MIL -PRF- 455分之19500 NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/455
|
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2N6284G
|
ON Semiconductor | 功能相似 | TO-204-2 |
ON SEMICONDUCTOR 2N6284G 单晶体管 双极, NPN, 100 V, 160 W, 20 A, 100 hFE 新
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