Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 7 mΩ
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 150 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/leakage source breakdown voltage: 55 V
Technical parameters/Continuous drain current (Ids): 90A
Technical parameters/rise time: 21 ns
Technical parameters/Input capacitance (Ciss): 2770pF @25V(Vds)
Technical parameters/rated power (Max): 150 W
Technical parameters/descent time: 19 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 150W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.66 mm
External dimensions/width: 4.83 mm
External dimensions/height: 16 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs Information/Hong Kong Import and Export License: NLR
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXTA90N055T
|
IXYS Semiconductor | 功能相似 | TO-263-3 |
D2PAK N-CH 55V 90A
|
||
IXTA90N055T2
|
IXYS Semiconductor | 功能相似 | TO-263-3 |
D2PAK N-CH 55V 90A
|
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