Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 1.4 Ω
Technical parameters/dissipated power: 89 W
Technical parameters/threshold voltage: 5.5 V
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/leakage source breakdown voltage: 500 V
Technical parameters/rise time: 26 ns
Technical parameters/Input capacitance (Ciss): 620pF @25V(Vds)
Technical parameters/descent time: 24 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 89W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.22 mm
External dimensions/width: 6.73 mm
External dimensions/height: 2.38 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXTP5N50P
|
IXYS Semiconductor | 功能相似 | TO-220-3 |
Trans MOSFET N-CH 500V 5A 3Pin(3+Tab) TO-220
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review