Technical parameters/rated voltage (DC): 500 V
Technical parameters/rated current: 26.0 A
Technical parameters/dissipated power: 400W (Tc)
Technical parameters/input capacitance: 3.60 nF
Technical parameters/gate charge: 65.0 nC
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/Continuous drain current (Ids): 26.0 A
Technical parameters/rise time: 25 ns
Technical parameters/Input capacitance (Ciss): 3600pF @25V(Vds)
Technical parameters/rated power (Max): 400 W
Technical parameters/descent time: 20 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 400W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-3-3
External dimensions/packaging: TO-3-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQA24N60
|
Freescale | 功能相似 | TO-3-3 |
ON Semiconductor QFET 系列 Si N沟道 MOSFET FQA24N60, 23 A, Vds=600 V, 3引脚 TO-3PN封装
|
||
STW20NK50Z
|
ST Microelectronics | 功能相似 | TO-247-3 |
N 通道 MDmesh™ SuperMESH™，250V 至 650V，STMicroelectronics ### MOSFET 晶体管，STMicroelectronics
|
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