Technical parameters/rated voltage (DC): 500 V
Technical parameters/rated current: 36.0 A
Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 170 mΩ
Technical parameters/dissipated power: 540 W
Technical parameters/threshold voltage: 5 V
Technical parameters/input capacitance: 5.50 nF
Technical parameters/gate charge: 85.0 nC
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/leakage source breakdown voltage: 500 V
Technical parameters/Continuous drain current (Ids): 36.0 A
Technical parameters/rise time: 27 ns
Technical parameters/Input capacitance (Ciss): 5500pF @25V(Vds)
Technical parameters/descent time: 21 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 540W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-3-3
External dimensions/length: 15.8 mm
External dimensions/width: 4.9 mm
External dimensions/height: 20.3 mm
External dimensions/packaging: TO-3-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQA24N60
|
Freescale | 功能相似 | TO-3-3 |
ON Semiconductor QFET 系列 Si N沟道 MOSFET FQA24N60, 23 A, Vds=600 V, 3引脚 TO-3PN封装
|
||
STW20NK50Z
|
ST Microelectronics | 功能相似 | TO-247-3 |
N 通道 MDmesh™ SuperMESH™，250V 至 650V，STMicroelectronics ### MOSFET 晶体管，STMicroelectronics
|
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