Technical parameters/dissipated power: 480 W
Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/rise time: 27 ns
Technical parameters/Input capacitance (Ciss): 10800pF @25V(Vds)
Technical parameters/descent time: 24 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 480W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/packaging: TO-247-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXTA260N055T2-7
|
IXYS Semiconductor | 功能相似 | TO-263-7 |
Mosfet n-Ch 55V 260A To-263
|
||
IXTH280N055T
|
IXYS Semiconductor | 类似代替 | TO-247-3 |
Trans MOSFET N-CH 55V 280A 3Pin(3+Tab) TO-247
|
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