Technical parameters/dissipated power: 830 W
Technical parameters/breakdown voltage (collector emitter): 600 V
Technical parameters/rated power (Max): 830 W
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 830000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/packaging: TO-247-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXSX80N60B
|
IXYS Semiconductor | 类似代替 | TO-247-3 |
Trans IGBT Chip N-CH 600V 180A 3Pin(3+Tab) PLUS 247
|
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