Technical parameters/number of channels: 1
Technical parameters/dissipated power: 42W (Tc)
Technical parameters/drain source voltage (Vds): 1200 V
Technical parameters/Input capacitance (Ciss): 270pF @25V(Vds)
Technical parameters/rated power (Max): 42 W
Technical parameters/dissipated power (Max): 42W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/width: 4.82 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXTA06N120P
|
IXYS Semiconductor | 功能相似 | TO-263-3 |
N沟道 1.2kV 600mA
|
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