Technical parameters/number of channels: 1
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 600W (Tc)
Technical parameters/drain source voltage (Vds): 250 V
Technical parameters/Continuous drain current (Ids): 100A
Technical parameters/Input capacitance (Ciss): 6300pF @25V(Vds)
Technical parameters/dissipated power (Max): 600W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-264-3
External dimensions/width: 5.31 mm
External dimensions/packaging: TO-264-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXTT100N25P
|
IXYS Semiconductor | 功能相似 | TO-268-3 |
IXTT 系列 单通道 N 沟道 250 V 27 mOhm 600 W 功率 Mosfet - TO-268
|
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