Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 60 mΩ
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 400 W
Technical parameters/threshold voltage: 5 V
Technical parameters/drain source voltage (Vds): 250 V
Technical parameters/leakage source breakdown voltage: 250 V
Technical parameters/Continuous drain current (Ids): 50A
Technical parameters/rise time: 25 ns
Technical parameters/Input capacitance (Ciss): 4000pF @25V(Vds)
Technical parameters/rated power (Max): 400 W
Technical parameters/descent time: 25 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 400W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 9.65 mm
External dimensions/width: 10.41 mm
External dimensions/height: 4.83 mm
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXTA50N25T
|
IXYS Semiconductor | 功能相似 | TO-263-3 |
TO-263AA N-CH 250V 50A
|
||
IXTH50N25T
|
IXYS Semiconductor | 功能相似 | TO-247-3 |
Mosfet n-Ch 250V 50A To-247
|
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