Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 250W (Tc)
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/Continuous drain current (Ids): 48A
Technical parameters/rise time: 26 ns
Technical parameters/Input capacitance (Ciss): 3090pF @25V(Vds)
Technical parameters/descent time: 28 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 250W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXTH48N20
|
IXYS Semiconductor | 功能相似 | TO-247-3 |
Trans MOSFET N-CH 200V 48A 3Pin(3+Tab) TO-247AD
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review