Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 750 Ω
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 78 W
Technical parameters/threshold voltage: 4V ~ 6.5V
Technical parameters/drain source voltage (Vds): 4500 V
Technical parameters/leakage source breakdown voltage: 4500 V
Technical parameters/Continuous drain current (Ids): 0.2A
Technical parameters/rise time: 48 ns
Technical parameters/Input capacitance (Ciss): 256pF @25V(Vds)
Technical parameters/descent time: 143 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 78W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: ISOPLUS-i4-PAK-3
External dimensions/packaging: ISOPLUS-i4-PAK-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
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