Technical parameters/dissipated power: 150000 mW
Technical parameters/breakdown voltage (collector emitter): 1200 V
Technical parameters/rated power (Max): 150 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 150000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/height: 9.15 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: End of Life
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRG4PF50W
|
Infineon | 功能相似 | TO-247 |
Trans IGBT Chip N-CH 900V 51A 3Pin(3+Tab) TO-247AC
|
||
SGP15N120
|
Infineon | 功能相似 | TO-220-3 |
在NPT技术降低40 %的Eoff快速IGBT相比上一代 Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation
|
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