Technical parameters/drain source resistance: 4.2 mΩ
Technical parameters/dissipated power: 480W (Tc)
Technical parameters/drain source voltage (Vds): 75 V
Technical parameters/leakage source breakdown voltage: 75 V
Technical parameters/rise time: 18 ns
Technical parameters/Input capacitance (Ciss): 10500pF @25V(Vds)
Technical parameters/descent time: 15 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 480W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXFA230N075T2
|
IXYS Semiconductor | 完全替代 | TO-263-3 |
TO-263AA N-CH 75V 230A
|
||
IXFH230N075T2
|
IXYS Semiconductor | 完全替代 | TO-247-3 |
TO-247 N-CH 75V 230A
|
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