Technical parameters/rated voltage (DC): 800 V
Technical parameters/rated current: 34.0 A
Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 240 mΩ
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 560000 mW
Technical parameters/drain source voltage (Vds): 800 V
Technical parameters/Continuous drain current (Ids): 34.0 A
Technical parameters/rise time: 45 ns
Technical parameters/Input capacitance (Ciss): 7500pF @25V(Vds)
Technical parameters/descent time: 40 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 560W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/width: 5.21 mm
External dimensions/packaging: TO-247-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Microsemi | 功能相似 | Through Hole |
Trans MOSFET N-CH 800V 38A 3Pin(3+Tab) T-MAX
|
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