Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 520W (Tc)
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/Continuous drain current (Ids): 44A
Technical parameters/Input capacitance (Ciss): 8400pF @25V(Vds)
Technical parameters/dissipated power (Max): 520W (Tc)
Encapsulation parameters/installation method: Chassis
Encapsulation parameters/Encapsulation: SOT-227-4
External dimensions/packaging: SOT-227-4
Physical parameters/operating temperature: -40℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXFN80N50
|
IXYS Semiconductor | 类似代替 | SOT-227-4 |
IXYS SEMICONDUCTOR IXFN80N50 晶体管, MOSFET, HiPerFET, N沟道, 80 A, 500 V, 55 mohm, 10 V, 4.5 V
|
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