Technical parameters/breakdown voltage (collector emitter): 600 V
Technical parameters/reverse recovery time: 50 ns
Technical parameters/rated power (Max): 300 W
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/packaging: TO-247-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXGX72N60B3H1
|
IXYS Semiconductor | 类似代替 | TO-247-3 |
Trans IGBT Chip N-CH 600V 178A 540000mW 3Pin(3+Tab) PLUS 247
|
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