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Model IXGT15N120CD1
Description Trans IGBT Chip N-CH 1200V 30A 150000mW 3Pin(2+Tab) TO-268AA
Product QR code
Brand: IXYS Semiconductor
Packaging TO-268-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
54.57  yuan 54.57yuan
1+:
$ 62.7532
10+:
$ 60.0248
100+:
$ 59.5337
250+:
$ 59.1517
500+:
$ 58.5515
1000+:
$ 58.2786
2500+:
$ 57.8966
5000+:
$ 57.5692
Quantity
1+
10+
100+
250+
500+
Price
$62.7532
$60.0248
$59.5337
$59.1517
$58.5515
Price $ 62.7532 $ 60.0248 $ 59.5337 $ 59.1517 $ 58.5515
Start batch production 1+ 10+ 100+ 250+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9865) Minimum order quantity(1)
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Technical parameters/dissipated power: 150000 mW

Technical parameters/breakdown voltage (collector emitter): 1200 V

Technical parameters/reverse recovery time: 40 ns

Technical parameters/rated power (Max): 150 W

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 150000 mW

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-268-3

External dimensions/length: 16.05 mm

External dimensions/width: 14 mm

External dimensions/height: 5.1 mm

External dimensions/packaging: TO-268-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Not Recommended for New Designs

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IXGT15N120BD1 IXGT15N120BD1 IXYS Semiconductor 完全替代 TO-268-3
Trans IGBT Chip N-CH 1200V 30A 150000mW 3Pin(2+Tab) TO-268AA
PDF
IXGT20N120BD1 IXGT20N120BD1 IXYS Semiconductor 类似代替 TO-268-3
Trans IGBT Chip N-CH 1200V 40A 190000mW 3Pin(2+Tab) TO-268
PDF

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