Technical parameters/rated voltage (DC): 600 V
Technical parameters/rated current: 75.0 A
Technical parameters/rated power: 300 W
Technical parameters/dissipated power: 300000 mW
Technical parameters/rise time: 25.0 ns
Technical parameters/breakdown voltage (collector emitter): 600 V
Technical parameters/rated power (Max): 300 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 300000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/height: 21.46 mm
External dimensions/packaging: TO-247-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HGTG30N60A4
|
ON Semiconductor | 功能相似 | TO-247-3 |
FAIRCHILD SEMICONDUCTOR HGTG30N60A4 单晶体管, IGBT, 通用, 75 A, 2.6 V, 463 W, 600 V, TO-247, 3 引脚
|
||
|
|
Freescale | 功能相似 | TO-247 |
FAIRCHILD SEMICONDUCTOR HGTG30N60A4D 单晶体管, IGBT, 通用, 75 A, 2.6 V, 463 W, 600 V, TO-247, 3 引脚
|
||
IXGH72N60A3
|
IXYS Semiconductor | 类似代替 | TO-247-3 |
IXGH 系列 600 Vce 72 A 31 ns t(on) GenX3 IGBT - TO-247
|
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